Miss one ISSCC (International Solid-Stat Circuits Conference) and you miss a lot.  Here's what went on at the ISSCC in San Francisco last weekend. 

Toshiba announced two new types of nonvolatile memory that will allow faster and smaller mobile devices.

FeRAM is a Ferroelectric Random Access Memory with 64MB density, 60ns and a 200 MPS read/write speeds.  Speed that rivals SRAM will be delivered from memory that can retain stored information while powered off.

MRAM was developed by Toshiba in conjunction with NEC.  Magnetoresistive Random Access Memory accomplishes 200MPS read/writes in a 34ns cycle at a low operating voltage of 1.8V.  MRAM promises to reduce the size of your non-volatile memory by 30% while giving it unheard of speeds.  Highly efficient MRAM is expected to be the memory of choice in the future generations of mobile devices.

Thanks for the memories.